研究者業績

酒井 正俊

サカイ マサトシ  (Masatoshi Sakai)

基本情報

所属
千葉大学 大学院工学研究院 准教授
学位
博士(工学)(名古屋大学)

J-GLOBAL ID
200901000249250188
researchmap会員ID
5000023260

外部リンク

論文

 78
  • Ryuichi Tokuyama, Ryuya Inakawa, Haruki Nakashima, Rikuto Matsumoto, Takeru Tsuchihashi, Yuto Ishimatsu, Ruoxue Zhang, Tatsuya OMORI, Hirofumi Mino, MASATOSHI SAKAI
    Japanese Journal of Applied Physics 2025年4月30日  査読有り責任著者
    Abstract The carrier dynamics of photogenerated holes in perovskite solar cells were observed using light-triggered time-domain reflectometry. The distribution of photogenerated holes in the perovskite layer began to expand immediately (within the time resolution) after light illumination. The hole frontline arrived at the perovskite/hole transport layer interface in 30 ns and at the hole transport layer/anode interface in 90 ns. Afterwards, the distribution of the photogenerated holes continued to grow and reached the steady photogeneration state in approximately 30 μs.
  • Chen Yi Ngu, Kaito Kozuki, Hinata Oshida, Sang Bin Lee, Raiki Hanazaki, Sayaka Kado, Kazuhiro Kudo, Masatoshi Sakai
    Applied Sciences 14(6) 2668-2668 2024年3月21日  査読有り責任著者
    Electrophotography is a digital, on-demand, dry, and page printing technique that operates based on toner particles of electronic materials using an electrostatic force and generates an electrical circuit via distribution of the toner particles. We developed a 10 μm linewidth resolution with various electronic materials, including conductors, semiconductors, and insulators, without any chemical pretreatments on the substrate films, while a 5 μm resolution was also possible for limited materials. The electrical resistivity of the printed Ag–Ni after an intense pulse light sintering was comparable to that of commercial indium tin oxide transparent films.
  • Ryosuke Ando, Ryo Watanuki, Kazuhiro Kudo, Hyuma Masu, Masatoshi Sakai
    Solids 4(3) 201-212 2023年8月1日  査読有り最終著者責任著者
    The metal–insulator transition induced by the gate electric field in the charge order phase of the α-(BEDT-TTF)2I3 single-crystal field-effect transistor (FET) structure was clearly observed near the phase transition temperature. An abrupt increase in the electrical conductance induced by the applied gate electric field was evident, which corresponds to the partial dissolution of the charge order phase triggered by the gate electric field. The estimated nominal dissolved charge order region (i.e., the gate-induced metallic region) was overestimated in 130–150 K, suggesting additional effects such as Joule heating. On the other hand, in the lower temperature region below 120 K, the corresponding dissolved charge order was several monolayers of BEDT-TTF, suggesting that it is possible to dissolve the charge order phase within the bistable temperature region.
  • Tomoaki Mashiko, Koki Takano, Akira Kaino, Sou Kuromasa, Shintaro Fujii, Tatsuya Omori, Masatoshi Sakai, Kazuhiro Kudo, Hirofumi Mino
    physica status solidi (a) 220 230014-1-230014-7 2023年6月6日  査読有り責任著者
  • Weisong LIAO, Akira KAINO, Tomoaki MASHIKO, Sou KUROMASA, Masatoshi SAKAI, Kazuhiro KUDO
    IEICE Transactions on Electronics E106-C(6) 236-239 2023年6月  査読有り責任著者

MISC

 125

書籍等出版物

 5

講演・口頭発表等

 146

担当経験のある科目(授業)

 11

共同研究・競争的資金等の研究課題

 27

学術貢献活動

 7