石谷 善博

Population distributions and transition fluxes of the A exciton in bulk GaN are theoretically analyzed using rate equations of states of the principal quantum number n up to 5 and the continuum. These rate equations consist of the terms of radiative, electron-collisional, and phononic processes. The dependence of the rate coefficients on temperature is revealed on the basis of the collisional-radiative model of hydrogen plasma for the electron-collisional processes and theoretical formulation using Fermi's "golden rule" for the phononic processes. The respective effects of the variations in electron, exciton, and lattice temperatures are exhibited. This analysis is a base of the discussion on nonthermal equilibrium states of carrier-exciton-phonon dynamics. It is found that the exciton dissociation is enhanced even below 150 K mainly by the increase in the lattice temperature. When the thermal-equilibrium temperature increases, the population fluxes between the states of n > 1 and the continuum become more dominant. Below 20 K, the severe deviation from the Saha-Boltzmann distribution occurs owing to the interband excitation flux being higher than the excitation flux from the 1S state. The population decay time of the 1S state at 300K is more than ten times longer than the recombination lifetime of excitons with kinetic energy but without the upper levels (n > 1 and the continuum). This phenomenon is caused by a shift of population distribution to the upper levels. This phonon-exciton-radiation model gives insights into the limitations of conventional analyses such as the ABC model, the Arrhenius plot, the two-level model (n = 1 and the continuum), and the neglect of the upper levels.

Although the Fano quantum interference of one longitudinal optical (LO) phonon mode and one electronic continuum of states due to inter-valence band transition has been investigated by the Raman spectra, there is no observation of the interference of multiple phonon modes despite its potential for electromagnetically induced transparency in the far infrared region. In this study, p-type Ga0.5In0.5P films with two main LO modes in the same plane of atomic vibration and one more mode due to CuPt-type ordering are investigated. Asymmetric line profiles, peak energy shifts and peak broadenings in the Raman spectra are analyzed, and the destructive quantum interference of these LO-continuum systems are observed. Discussion with the reference data of p-type GaAs and Si for the one-LO mode system reveals that the asymmetry parameter features the derivatives of the density of the continuum of states in the vicinity of the LO phonon energies and the degree of the electric polarization. It is found experimentally that the interaction between the two main LO modes through the interactions with the continuum states takes place. A(1)(LO) mode due to the ordering affects the spectrum, however the interaction with the main two LO modes through the continuum is small. On the basis of the experimental result, the spectrum features for this alloy with greater hole density are estimated, where the various controls of the absorption spectrum in the phonon energy region are predicted.

In the present article, we focus our discussion on the carrier dynamics of the scattering and recombination processes of InN films and the related band-edge energy structure. Various reports on this matter are summarized and some issues are reexamined. The analysis result based on the apparent band-band transition matrix element is consistent with a reported effective heavy hole mass of 0.59 (+/- 0.06) m(0). An E-p value related to the transition matrix element of 10-14 eV is thought to be plausible. The ambiguity of the band-edge structure is evaluated by the uncertainty of electron density. The distortion of the conduction band bottom and the ambiguity of the estimation of the many-body effect are discussed. The enhancement of the anisotropic electron-scattering nature with the decrease in residual electron density reveals that the residual electron source has isotropic potentials: point defects or small complexes. Infrared reflectance spectrum analysis reveals the high electron mobility inside grains in spite of the scattering by edge-type dislocations which cause the anisotropic carrier scattering. The recombination processes at low temperatures are dominated by nonradiative processes related to edge-type dislocations, while the thermally activated nonradiative recombination process is independent of the dislocation density. The activation processes and energies of the recombination related to phonon localization are characterized. InN is a peculiar material that has high carrier mobility and a strong electron-phonon interaction, which possibly induces the high nonradiative carrier recombination rate. The control of phonon localization is thus required. (C) 2014 The Japan Society of Applied Physics