トップページ - 千葉大学　研究者情報

低速陽電子消滅法による表面層欠陥分析

化学と工業 47 1555-1557

単色陽電子ビームによる表面層欠陥の評価

表面技術 45 62-66

単色陽電子ビームによるSiO2膜の欠陥解析

誘電・絶縁材料研究会資料 DEI-93-171 71-79

陽電子ビーム利用分析法 (共著)

ぶんせき 35-42

メスバウアースペクトロメトリー (共著)

耐火物 38 707-712

Observation of positron induced ion desorption (共著)

Mater. Sci. Forum 445-446 370-374

Positron beam study of defects induced in Ar-implanted Si (共著)

Mater. Sci. Forum 445-446 150-152

Depth dependence of defects in ion-implanted Si probed by a positron beam (共著)

Mater. Sci. Forum 445-446 78-80

Improved depth profiling of ion implantation-induced damage in silicon with slow positrons (共著)

Journal of Applied Physics 94 4382-4387

Helium ion implantation-induced defects in silicon probed with variable-energy positrons (共著)

Physical Review B 68 165332-1-165332-6

Defects in semiconductors (共著)

Materials Science Forum 363-365 52-55

Fundamental process of surface enhanced Raman scattering detected with transient reflecting grating spectrscopy (共著)

Analytical Sciences 17

Spectroscopic analysis of transiently enhanced stimulated Raman scattering in OH stretching vibrational region of water molecules (共著)

Analytical Sciences 17

The Ultrafast transient lens measurement of the photoisomerization process of an azobenzene derivative; Contribution of solute-soluvent interactions (共著)

Analytical Sciences 17

Decomposition of Doppler broadened annihilation spectra (共著)

Material Science Forum 225-257 793-795

Positron trapping Defects in neutron-irradiated vitreous and crystalline SiO2 (共著)

Material Science Forum 225-257 460-462

Material Science Forum 225-227 218-212

Crystallographic Anaysis of flow pattern defers in dislocated Czochralski silicon crystals (共著)

Material Reseach Society Symposium Proceedings 442 125-130

Study of defects behavior in ion-implanted Si wafers by slow positron annihilation sprctroscopy (共著)

Material Science Forum 196-201 1165-1170

Positron and positronium in free volume in oxides: silica glass and neutron-irradiated alumina (共著)

Material Science Forum 175-178 269-278

A study of defects in SiO2 films on Si by variable-energy positron annihilation sprctroscopy (共著)

Material Science Forum 175-178 157-160

新日本製鐵のエネルギー可変陽電子表面分析装置

放射線 18 55-61

Relation between Cu L X-ray and Cu 2p photoelectron in YBa2Cu30x (共著)

Japanese Journal of Applied Physics 28 L1959-L1962

57Fe conversion electron Mossbauer spectrometric study of boron and carbon ion implanted irons (共著)

Hyperfine Interactions 42 985-988

P. Kovacs, S. Nagy, T. Masumoto, “Mossbauer study of Fe-Zr hydrogenated at different cathodic potentials” (共著)

Hyperfine Interactions 42 939-942

Mossbauer study on crystallization transformation in amorphous Fe90Zr10 alloy ribbon (共著)

Journal of Applied Physics 59 2384-2391

In situ conversion electron Mossbauer spectrometry applied to the study of the corrosion products formed in solution (共著)

Hyperfine Interactions 29 1479-1482

Application of conversion electron Mossbauer spectrometry to the study of reactive sputtered iron oxide films (共著)

Hyperfine Interactions 29 1475-1478

Mossbauer study on surface crystallization behavior of amorphous Fe90Zr10 alloy ribbon (共著)

Hyperfine Interactions 27 301-304

Rapid determination of lead extracted by acetic acid from glazed ceramic surfaces by flow injection on-line preconcentrationand spectrophotometric detection (jointly worked)

Observation of positron induced ion desorption (jointly worked)

Positron beam study of defects induced in Ar-implanted Si (jointly worked)

Depth dependence of defects in ion-implanted Si probed by a positron beam (jointly worked)

Real-Time Observation for the Enzymatic Reaction of Phospholipid Membrane: Application of the Time-Resolved Quasi-Elastic Laser Scattering Method (jointly worked)

Chemical Oscillation with Periodic Adsorption and Desorption of Surfactant Ions at a Water/Nitrobenzene Interface (jointly worked)

Direct Observation of Chemical Oscillation at a Water/Nitrobenzene Interface with a Sodium-alkyl-sulfate System (jointly worked)

A Novel Separation and Preconcentration Method for Traces of Manganese, Cobalt, Zinc and Cadmium Using Coagulation of Colloidal Silica (jointly worked)

A positron beam study of vacancy?impurity complexes in inert gas ion-implanted silicon (jointly worked)

Improved depth profiling of ion implantation-induced damage in silicon with slow positrons (jointly worked)

Helium ion implantation-induced defects in silicon probed with variable-energy positrons (jointly worked)

Coincidence Doppler broadening positron annihilation spectroscopy in defects of silicon and iron (jointly worked)

Ultrafast dynamics of aqueous solutions in size-controlled reverse micelles (jointly worked)

Highly sensitive detection of molecules at the liquid/liquid interface using total internal reflection - optical beam deflection based on photothermal spectroscopy (jointly worked)

Fundamental process of surface enhanced Raman scattering detected with transient reflecting grating spectrscopy (jointly worked)

Defect study on ion-implanted Si by coincidence Doppler broadening measurement (jointly worked)

Defects in semiconductors (jointly worked)

Buried oxide and defects in oxygen implanted Si monitored by positron annihilation spectroscopy (jointly worked)

Ultrafast refractive index change induced by photoisomerization of an azobenzen deriveative: Contribution of solvateion dynamics of solvent molecules (jointly worked)

Fundamental process of surface enhanced Raman scattering detected with transient reflecting grating spectrscopy (jointly worked)

Spectroscopic analysis of transiently enhanced stimulated Raman scattering in OH stretching vibrational region of water molecules (jointly worked)

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基本情報

MISC

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