大学院工学研究院

工藤 一浩

クドウ カズヒロ  (Kazuhiro Kudo)

基本情報

所属
千葉大学 大学院工学研究院電気電子工学コース 千葉大学
学位
工学博士(東京工業大学)

J-GLOBAL ID
200901086069579426
researchmap会員ID
1000010464

外部リンク

経歴

 1

学歴

 1

受賞

 15

MISC

 239
  • Appl.Phys.Lett. 87(22) 223505-1-223505-3 2005年11月  
  • K Kudo
    CURRENT APPLIED PHYSICS 5(4) 337-340 2005年5月  
    Organic light emitting transistors which are vertically combined with the organic static induction transistor and organic light emitting diode are fabricated and the device characteristics depending on the structure of gate electrode are investigated. By optimizing the layer thickness and the size of slit-type Al gate electrode, high luminance modulation by low gate voltage as high as 1 V are obtained. The organic light emitting transistor described here is a suitable element for flexible sheet displays. (c) 2004 Published by Elsevier B.V.
  • H Yanagisawa, T Tamaki, M Nakamura, K Kudo
    THIN SOLID FILMS 464 398-402 2004年10月  
    Grain morphology, crystal structure and transistor characteristics of pentacene films have been studied using molecular beam deposition under various conditions: growth temperature ranging from - 5 to 80 degreesC and growth rate from 0.15 to 2 nm/min. Grain morphologies observed with atomic force microscopy are categorized into five groups, which are summarized in a phase diagram. Above the growth temperature of 40 degreesC, many 'recessed regions' which extend independently of molecular steps are observed on the film surfaces. Carrier mobilities of the films estimated from transistor measurements are distributed from 1 x 10(-5) to 0.20 cm(2)/Vs. A comparative study between the structural and electrical results indicates that the mobility does not explicitly depend either on grain size or on specific grain morphology. Lamellar grains associated with flat-lying molecules among differently oriented grains, gaps between grains and the recessed regions are considered to restrict the overall carrier mobility. (C) 2004 Elsevier B.V. All rights reserved.
  • T Shimada, T Suetsugu, T Miyadera, Y Yamamoto, A Koma, K Saiki, K Kudo
    APPLIED PHYSICS LETTERS 84(13) 2439-2441 2004年3月  
    Ultraviolet photoelectron spectroscopy (UPS) of C-60 thin-film field-effect transistors was measured with biasing gate voltages. A time-dependent change in the electronic structure of the C-60 film was, observed during the UPS measurement, which has never been observed in a C-60 film grown on a conductive substrate. The change was attributed to the accelerated polymerization of C-60 by comparing the UPS with that of the photopolymerized C-60. The polymerization Was associated with the increase in the field-effect electron mobility. This result indicates that mobile carriers produce reactive radicals in organic semiconductors. (C) 2004 American Institute of Physics.
  • 電気学会技術報告 2004年  

講演・口頭発表等

 270

担当経験のある科目(授業)

 14

共同研究・競争的資金等の研究課題

 40

社会貢献活動

 19