Kazuyuki Matsubayashi   Hidekazu Okamura   Takashi Mizokawa   Naoyuki Katayama   Akitoshi Nakano   Hiroshi Sawa   Tatsuya Kaneko   Tatsuya Toriyama   Takehisa Konishi   Yukinori Ohta   Hiroto Arima   Rina Yamanaka   Akihiko Hisada   Taku Okada   Yuka Ikemoto   Taro Moriwaki   Koji Munakata   Akiko Nakao   Minoru Nohara   Yangfan Lu   Hidenori Takagi   Yoshiya Uwatoko   
Journal of the Physical Society of Japan 90(7) 74706-74706 2021年7月 [査読有り]
The excitonic insulator Ta2NiSe5 experiences a first-order structural transition under pressure from rippled to flat layer-structure at Ps ~ 3 GPa, which drives the system from an almost zero-gap semiconductor to a semimetal. The pressure-induced ...