科学技術振興事業団 戦略的基礎研究「電子・光子等の機能制御」（理化学研究所・半導体工学研究室）(Function Evolution of Materials and Devices Based on Electron/Photon Related Phenomena， CREST) 研究員(Reseacher)
Japanese Journal of Applied Physics 57(5) 050306-1-050306-4 2018年5月 [査読有り]
The elliptical polarization dependence of the two-photon absorption coefficient β in InP has been measured by the extended Z-scan technique for thick materials in the wavelength range from 1640 to 1800 nm. The analytical formula of the Z-scan tech...
JOURNAL OF CRYSTAL GROWTH 278(1-4) 464-467 2005年5月
A new method of InP substrate cleaning is presented for molecular beam epitaxy (MBE). It is based on the congruent sublimation of InP at a temperature of 380 ± 50 ° C and is phosphorous-beam free, so that the substrate cleaning can be c...
H Bando M Kosuge K Ban H Yoshino R Takahashi H Okamoto T Okuno Y Masumoto
JOURNAL OF CRYSTAL GROWTH 278(1-4) 610-613 2005年5月
Misfit dislocation was investigated by observing crosshatch over surfaces of InxGa1-xAs-In0.52Al0.48As strained multiple quantum wells (MQWs) and InxGa1-xAs bulk-like thin epifilms grown on InP substrates. It was found that no crosshatch was obser...
T Okuno Y Masumoto A Higuchi H Yoshino H Bando H Okamoto
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 44(16-19) L558-L560 2005年
Optical absorption saturation density I-s was measured for InxGa1-xAs-In0.52Al0.48As multiple quantum well structures grown on InP (100) substrates by molecular beam epitaxy. Indium composition x was varied from 0.32 to 0.70 so that the quantum we...
T Okuno Y Masumoto A Higuchi H Yoshino H Bando H Okamoto
2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings 560-561 2004年
Optical absorption saturation intensity Is was measured by using femtosecond light pulse for InxGa1-xAs-In(0.52)Al(0.48)AS MQW grown on InP (100) substrates. Is showed minimum at x=0.46 (under tensile strain). This was in marked contrast to the pr...
大学院国際学術研究院