応用物理学会フォノンエンジニアリング研究グループ第4回研究会, 優秀ポスター賞,LO phonon resonant mid-IR emission from surface-metal structures on indirect electronic transition type semiconductorsK. Hayashi N. Orito K. Sekigawa N. Aihara M. Bei K. Morita Y. Ishitani
2020年12月
応用物理学会フォノンエンジニアリング研究グループ第4回研究会, 優秀ポスター賞,Analysis of phonon transport at GaInN/GaN heterointerfaces by Raman spectroscopy using simultaneous irradiation of two lasersS. Okamoto K. Ito D. Iizasa B. Ma K. Morita Y. Ishitani
Kensuke Oki   Bei Ma   Yoshihiro Ishitani   
PHYSICAL REVIEW B 96(20) 205204 2017年11月 [査読有り]
Population distributions and transition fluxes of the A exciton in bulk GaN are theoretically analyzed using rate equations of states of the principal quantum number n up to 5 and the continuum. These rate equations consist of the terms of radiati...
Hironori Sakamoto   Bei Ma   Ken Morita   Yoshihiro Ishitani   
JOURNAL OF PHYSICS D-APPLIED PHYSICS 49(37) 35107 2016年9月 [査読有り]
Although the Fano quantum interference of one longitudinal optical (LO) phonon mode and one electronic continuum of states due to inter-valence band transition has been investigated by the Raman spectra, there is no observation of the interference...
B Cao   K Xu   BW Seo   S Arita   S Nishida   Y Ishitani   A Yoshikawa   
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS 0(7) 2553-2556 2003年
Effects of migration-enhanced-epitaxy-grown AlN (MEE-AlN) on polarities of GaN were investigated in low-pressure metal-organic vapor phase epitaxy (LP-MOVPE). AlN was grown on extensively nitrided sapphire substrate by alternatively supplying trim...