Y. Unno C. Gallrapp R. Hori J. Idarraga S. Mitsui R. Nagai T. Kishida A. Ishida M. Ishihara S. Kamada T. Inuzuka K. Yamamura K. Hara Y. Ikegami O. Jinnouchi A. Lounis Y. Takahashi Y. Takubo S. Terada K. Hanagaki N. Kimura K. Nagai I. Nakano R. Takashima J. Tojo K. Yorita
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 699 72-77 2013年1月
We have been developing highly radiation-tolerant n+-in-p planar pixel sensors for use in the high-luminosity LHC. Novel n+-in-p structures were made using various combinations of the bias structures (punch-through or polysilicon resistor), isolat...
S. Mitsui Y. Unno Y. Ikegami Y. Takubo S. Terada K. Hara Y. Takahashi O. Jinnouchi R. Nagai T. Kishida K. Yorita K Hanagaki R. Takashima S. Kamada K. Yamamura
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 699 36-40 2013年1月
Planar geometry silicon pixel and strip sensors for the high luminosity upgrade of the LHC (HL-LHC) require a high bias voltage of 1000 V in order to withstand a radiation damage caused by particle fluences of 1×10 16 1 MeV neq/cm2 and 1×1015 1 Me...
大学院国際学術研究院