研究者業績

星野 忠次

ホシノ チュウジ  (Tyuji Hoshino)

基本情報

所属
千葉大学 大学院薬学研究院 准教授
学位
博士(工学)(早稲田大学)

J-GLOBAL ID
200901091415976961
researchmap会員ID
1000169674

外部リンク

論文

 146
  • Taichi Kamo, Keiichi Kuroda, Saki Nimura, Yan Guo, Shota Kondo, Michiyoshi Nukaga, Tyuji Hoshino
    Biochemistry 63(10) 1278-1286 2024年5月21日  
    Metallo-β-lactamases (MBL) deactivate β-lactam antibiotics through a catalytic reaction caused by two zinc ions at the active center. Since MBLs deteriorate a wide range of antibiotics, they are dangerous factors for bacterial multidrug resistance. In this work, organic synthesis, computational design, and crystal structure analysis were performed to obtain potent MBL inhibitors based on a previously identified hit compound. The hit compound comprised 3,4-dihydro-2(1H)-quinolinone linked with a phenyl-ether-methyl group via a thiazole ring. In the first step, the thiazole ring was replaced with a tertiary amine to avoid the planar structure. In the second step, we virtually modified the compound by keeping the quinolinone backbone. Every modified compound was bound to a kind of MBL, imipenemase-1 (IMP-1), and the binding pose was optimized by a molecular mechanics calculation. The binding scores were evaluated for the respective optimized binding poses. Given the predicted binding poses and calculated binding scores, candidate compounds were determined for organic syntheses. The inhibitory activities of the synthesized compounds were measured by an in vitro assay for two kinds of MBLs, IMP-1 and New Delhi metallo-β-lactamase (NDM-1). A quinolinone connected with an amine bound with methyl-phenyl-ether-propyl and cyclohexyl-ethyl showed a 50% inhibitory concentration of 4.8 μM. An X-ray crystal analysis clarified the binding structure of a synthesized compound to IMP-1. The δ-lactam ring of quinolinone was hydrolyzed, and the generated carboxyl group was coordinated with zinc ions. The findings on the chemical structure and binding pose are expected to be a base for developing MBL inhibitors.
  • Kouichi Kitamura, Tyuji Hoshino, Atsushi Okabe, Masaki Fukuyo, Bahityar Rahmutulla, Nobuko Tanaka, Sohei Kobayashi, Tomoaki Tanaka, Takashi Shida, Mashiro Ueda, Toshinari Minamoto, Hisahiro Matsubara, Atsushi Kaneda, Hideshi Ishii, Kazuyuki Matsushita
    International journal of molecular sciences 24(24) 2023年12月11日  
    The interaction between mRNA and ribosomal RNA (rRNA) transcription in cancer remains unclear. RNAP I and II possess a common N-terminal tail (NTT), RNA polymerase subunit RPB6, which interacts with P62 of transcription factor (TF) IIH, and is a common target for the link between mRNA and rRNA transcription. The mRNAs and rRNAs affected by FUBP1-interacting repressor (FIR) were assessed via RNA sequencing and qRT-PCR analysis. An FIR, a c-myc transcriptional repressor, and its splicing form FIRΔexon2 were examined to interact with P62. Protein interaction was investigated via isothermal titration calorimetry measurements. FIR was found to contain a highly conserved region homologous to RPB6 that interacts with P62. FIRΔexon2 competed with FIR for P62 binding and coactivated transcription of mRNAs and rRNAs. Low-molecular-weight chemical compounds that bind to FIR and FIRΔexon2 were screened for cancer treatment. A low-molecular-weight chemical, BK697, which interacts with FIRΔexon2, inhibited tumor cell growth with rRNA suppression. In this study, a novel coactivation pathway for cancer-related mRNA and rRNA transcription through TFIIH/P62 by FIRΔexon2 was proposed. Direct evidence in X-ray crystallography is required in further studies to show the conformational difference between FIR and FIRΔexon2 that affects the P62-RBP6 interaction.
  • Kazunori Miwa, Yan Guo, Masayuki Hata, Yoshinori Hirano, Norio Yamamoto, Tyuji Hoshino
    Chemical and Pharmaceutical Bulletin 71(12) 897-905 2023年12月1日  
  • Yuma Ito, Huiyan Lu, Mariko Kitajima, Hayato Ishikawa, Yoshihiro Nakata, Yasumasa Iwatani, Tyuji Hoshino
    Journal of natural products 86(11) 2487-2495 2023年11月24日  
    The emergence of drug-resistant viruses is a serious concern in current chemotherapy for human immunodeficiency virus type-1 (HIV-1) infectious diseases. Hence, antiviral drugs aiming at targets that are different from those of approved drugs are still required, and the RNase H activity of HIV-1 reverse transcriptase is a suitable target. In this study, a search of a series of natural compounds was performed to identify the RNase H inhibitors. Three compounds were found to block the RNase H enzymatic activity. A laccaic acid skeleton was observed in all three natural compounds. A hydroxy phenyl group is connected to an anthraquinone backbone in the skeleton. An acetamido-ethyl, amino-carboxy-ethyl, and amino-ethyl are bound to the phenyl in laccaic acids A, C, and E, respectively. Laccaic acid C showed a 50% inhibitory concentration at 8.1 μM. Laccaic acid C also showed inhibitory activity in a cell-based viral proliferation assay. Binding structures of these three laccaic acids were determined by X-ray crystallographic analysis using a recombinant protein composed of the HIV-1 RNase H domain. Two divalent metal ions were located at the catalytic center in which one carbonyl and two hydroxy groups on the anthraquinone backbone chelated two metal ions. Molecular dynamics simulations were performed to examine the stabilities of the binding structures. Laccaic acid C showed the strongest binding to the catalytic site. These findings will be helpful for the design of potent inhibitors with modification of laccaic acids to enhance the binding affinity.
  • Sohei Kobayashi, Takaki Hiwasa, Kouichi Kitamura, Masayuki Kano, Tyuji Hoshino, Sho Hirano, Mayuko Hashimoto, Masanori Seimiya, Hideaki Shimada, Fumio Nomura, Hisahiro Matsubara, Kazuyuki Matsushita
    Journal of clinical laboratory analysis e24978 2023年11月14日  
    BACKGROUND: At different stages of the disease, biomarkers can help to determine disease progression and recurrence and provide a personalized indicator of therapeutic effectiveness. The serological identification of antigens by recombinant cDNA expression cloning (SEREX) has identified five SEREX antigens. RESULTS: Compared with healthy donors, anti-FIRΔexon2 and anti-SOHLH antibodies (Abs) in the sera of patients with colorectal cancer (CRC) were markedly higher. Furthermore, no correlation was noted between five SEREX antigens and the three tumor markers (CEA, CA19-9, and anti-p53 Abs), indicating that anti-FIRΔexon2 Abs are an independent candidate marker for patients with CRC. Generally, the levels of anti-FIRΔexon2 Abs combined with clinically available tumor markers were determined to be significantly higher compared with CEA, CA19-9. Moreover, in early-stage CRC, the levels of anti-FIRΔexon2 Abs combined with existing tumor markers were higher than those of CEA, CA19-9. CONCLUSION: Due to the highly heterogeneous nature of CRC, a single tumor marker is unlikely to become a standalone diagnostic test due to its commonly insufficient sensitivity and/or specificity. Using a combination antibody detection approach of tumor markers for CRC diagnosis has the potential to be an effective approach. Therefore, the use of serum protein biomarker candidates holds promise for the development of inexpensive, noninvasive, and inexpensive tests for the detection of CRC.

MISC

 281
  • N Enomoto, T Hoshino, M Hata, M Tsuda
    APPLIED SURFACE SCIENCE 130 237-242 1998年6月  
    Ab initio quantum chemical calculations with density functional theory have been performed to investigate the migration process of Al adatom on the partially H-terminated Si(111) surfaces. The transfer of Al adatom from H-terminated to bare Si area has been revealed to proceed spontaneously. The potential energy barrier during the Al migration on the H-terminated monohydride Si(111) surface has been confirmed to be extremely small. Further, the potential energy monotonously decrease without any activation energy barrier as transferring of Al adatom from the H-terminated to the bare area on Si(111) surface. The stabilization energy due to the Al adatom migration from H-terminated area to the T(4) site on bare Si area is estimated to be 3.6 eV. (C) 1998 Elsevier Science B.V. All rights reserved.
  • Norihito Ohmori, Masayuki Hata, Tyuji Hoshino, Minoru Tsuda
    Journal of Photopolymer Science and Technology 11(3) 395-398 1998年  
  • OHMORI N, NAKAZONO Y, HATA M, HOSHINO T, TSUDA M
    The Journal of Physical Chemistry B 102(6) 927-930 1998年  
  • Norihito Ohmori, Masayuki Hata, Tyuji Hoshino, Minoru Tsuda
    Journal of Photopolymer Science and Technology 11(3) 395-398 1998年  
  • OHMORI N, NAKAZONO Y, HATA M, HOSHINO T, TSUDA M
    The Journal of Physical Chemistry B 102(6) 927-930 1998年  
  • T Watanabe, T Hoshino, Ohdomari, I
    SURFACE SCIENCE 389(1-3) 375-381 1997年11月  
    Monte Carlo simulations of a two-dimensional lattice gas in the grand canonical ensemble are performed to analyze the behavior of Si adatoms on Si(111)-1 x 1 surfaces. 2 x 2, c2 x 8 and c2 x 4 structures appear at 300 K under the condition that only Coulomb repulsion is introduced as a pair interaction between adatoms. The adatom density increases with the temperature, and root 3 x root 3 structures appear at 550 degrees C. These results agree with our recent STM observations. (C) 1997 Elsevier Science B.V.
  • 石井 美保, 畑 晶之, 星野 忠次, 津田 穣
    生物物理 37 S23 1997年10月  
  • T. Watanabe, T. Hoshino, I. Ohdomari
    Applied Surface Science 117-118 67-71 1997年6月2日  
    Semiempirical molecular orbital calculations were performed to investigate the mechanism of H2 desorption from dihydride species on Si(001) surfaces. The lowest energy pathways were calculated with respect to three different mechanisms which have been proposed previously. We performed additional calculations under the different H coverage conditions to examine the dependence of activation energy on the varieties of surrounding hydride species. The new transition state structure was obtained by the calculation of the recombinative desorption of two H atoms from adjacent Si dihydrides. We have found that the activation barrier of the recombinative desorption mechanism was the lowest of all and it was hardly influenced no matter what the surrounding hydride species is.
  • T Hoshino, N Enomoto, K Okano, M Tsuda
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 36(6B) 4049-4052 1997年6月  
    The mechanism of migration of Al adatoms on H-terminated Si(lll) surfaces has been investigated by ab initio calculations using density functional theory. The positions of Al adatoms in the potential energy minima and the energy change along the least potential energy path for Al adatom migration have been obtained. Furthermore, we demonstrate the difference between the migration processes on H-terminated and bare Si surfaces. The activation energy required for Al adatom migration has been estimated to be 1.0 eV on bare Si surfaces, but the energy required is very small (2 meV) for Al adatom migration on H-terminated surfaces. Energetic stabilization originating from Al adsorption on H-terminated surfaces is very slight compared with that originating from Al adsorption on bare Si surfaces. Based on these theoretical results, a micro fabrication technique has been proposed for the production of Al nanostructures on H-terminated Si(lll) surfaces by selective growth of Al dots only at bare Si areas.
  • T Watanabe, T Hoshino, Ohdomari, I
    APPLIED SURFACE SCIENCE 117 67-71 1997年6月  
    Semiempirical molecular orbital calculations were performed to investigate the mechanism of H-2 desorption from dihydride species on Si(001) surfaces. The lowest energy pathways were calculated with respect to three different mechanisms which have been proposed previously. We performed additional calculations under the different H coverage conditions to examine the dependence of activation energy on the varieties of surrounding hydride species. The new transition state structure was obtained by the calculation of the recombinative desorption of two H atoms from adjacent Si dihydrides. We have found that the activation barrier of the recombinative desorption mechanism was the lowest of all and it was hardly influenced no matter what the surrounding hydride species is.
  • T Hoshino, N Enomoto, K Okano, M Tsuda
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 36(6B) 4049-4052 1997年6月  
    The mechanism of migration of Al adatoms on H-terminated Si(lll) surfaces has been investigated by ab initio calculations using density functional theory. The positions of Al adatoms in the potential energy minima and the energy change along the least potential energy path for Al adatom migration have been obtained. Furthermore, we demonstrate the difference between the migration processes on H-terminated and bare Si surfaces. The activation energy required for Al adatom migration has been estimated to be 1.0 eV on bare Si surfaces, but the energy required is very small (2 meV) for Al adatom migration on H-terminated surfaces. Energetic stabilization originating from Al adsorption on H-terminated surfaces is very slight compared with that originating from Al adsorption on bare Si surfaces. Based on these theoretical results, a micro fabrication technique has been proposed for the production of Al nanostructures on H-terminated Si(lll) surfaces by selective growth of Al dots only at bare Si areas.
  • Ohdomari, I, T Watanabe, K Kumamoto, T Hoshino
    PHASE TRANSITIONS 62(4) 245-258 1997年  
    Si(111) surface reconstructions are classified into two families, the 2 x 2 family (2 x 2, c2 x 4, c2 x 8 and root 3 x root 3) and n x n DAS family. By in-situ atomic scale observation of Si(111) surface reconstruction and by a statistical argument on the nucleation of a daughter phase in Si(lll) matrix, we have found that the 2 x 2 family is a result of random motion of adatoms on a Si(lll)-1 x 1 substrate, while the n x n DAS family can never be formed only by the movement of adatoms but some cooperative movement of substrate Si atoms is necessary.
  • Yoshikazu Nakazono, Norihito Ohmori, Masayuki Hata, Tadatsugu Hoshino, Minoru Tsuda
    Journal of Photopolymer Science and Technology 10(3) 485-488 1997年  
  • Ohdomari, I, T Watanabe, K Kumamoto, T Hoshino
    PHASE TRANSITIONS 62(4) 245-258 1997年  
    Si(111) surface reconstructions are classified into two families, the 2 x 2 family (2 x 2, c2 x 4, c2 x 8 and root 3 x root 3) and n x n DAS family. By in-situ atomic scale observation of Si(111) surface reconstruction and by a statistical argument on the nucleation of a daughter phase in Si(lll) matrix, we have found that the 2 x 2 family is a result of random motion of adatoms on a Si(lll)-1 x 1 substrate, while the n x n DAS family can never be formed only by the movement of adatoms but some cooperative movement of substrate Si atoms is necessary.
  • Yoshikazu Nakazono, Norihito Ohmori, Masayuki Hata, Tadatsugu Hoshino, Minoru Tsuda
    Journal of Photopolymer Science and Technology 10(3) 485-488 1997年  
  • Yoshikazu Nakazono, Norihito Ohmori, Masayuki Hata, Tadatsugu Hoshino, Minoru Tsuda
    Journal of Photopolymer Science and Technology 10(3) 485-488 1997年  
  • T Hoshino, M Hata, S Oikawa, M Tsuda, Ohdomari, I
    PHYSICAL REVIEW B 54(16) 11331-11339 1996年10月  
    Structural transformations of dimer rows on 2x1-reconstructed Si(001) surfaces have been investigated with ab initio quantum theoretical calculations. It has been revealed that the adsorption of Li or H atom induces the buckling of the dimer at the adsorbed site, and this buckling propagates along the dimer-row to produce a zigzag dimer row structure. There appear extra filled- and empty-state band structures near the Fermi level, which consist of occupied and unoccupied molecular orbitals localized on the upper- and lower-side Si atoms of buckled dimers, respectively. Scanning tunneling microscopy images obtained in a zigzag dimer row on Si(001) surfaces have been demonstrated to reflect the spatial distributions of electrons in these extra bands. The origin of the buckling propagation is explained by electron distribution on the surface, and dimer-row structures at low or room temperature have also been discussed.
  • T Hoshino, M Hata, S Oikawa, M Tsuda, Ohdomari, I
    PHYSICAL REVIEW B 54(16) 11331-11339 1996年10月  
    Structural transformations of dimer rows on 2x1-reconstructed Si(001) surfaces have been investigated with ab initio quantum theoretical calculations. It has been revealed that the adsorption of Li or H atom induces the buckling of the dimer at the adsorbed site, and this buckling propagates along the dimer-row to produce a zigzag dimer row structure. There appear extra filled- and empty-state band structures near the Fermi level, which consist of occupied and unoccupied molecular orbitals localized on the upper- and lower-side Si atoms of buckled dimers, respectively. Scanning tunneling microscopy images obtained in a zigzag dimer row on Si(001) surfaces have been demonstrated to reflect the spatial distributions of electrons in these extra bands. The origin of the buckling propagation is explained by electron distribution on the surface, and dimer-row structures at low or room temperature have also been discussed.
  • Yoshikazu Nakazono, Norihito Ohmori, Ehchi Araki Masayuki Hata, Tadatsugu Hoshino, Minoru Tsuda
    Journal of Photopolymer Science and Technology 9(4) 693-696 1996年  
  • Norihito Ohmori, Yoshikazu Nakazono, Eiichi Araki, Masayuki Hata, Tadatsugu Hoshino, Minoru Tsuda
    Journal of Photopolymer Science and Technology 9(4) 587-590 1996年  
  • Yoshikazu Nakazono, Norihito Ohmori, Ehchi Araki Masayuki Hata, Tadatsugu Hoshino, Minoru Tsuda
    Journal of Photopolymer Science and Technology 9(4) 693-696 1996年  
  • Norihito Ohmori, Yoshikazu Nakazono, Eiichi Araki, Masayuki Hata, Tadatsugu Hoshino, Minoru Tsuda
    Journal of Photopolymer Science and Technology 9(4) 587-590 1996年  
  • T HOSHINO, K KOKUBUN, K KUMAMOTO, T ISHIMARU, OHDOMARI, I
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 34(6B) 3346-3350 1995年6月  
    High temperature scanning tunneling microscopy (STM) observation has been performed to investigate the energetic stability of metastable structures of Si(111) surfaces. Upon supercooling from 1100 degrees C, 5 x 5 and 9 x 9 structures have been observed at 600 degrees C, as well as the reconstructed 7 x 7 and disordered 1 x 1 areas. The 5 x 5 and 9 x 9 areas shrink to disappear as a consequence of the growth of 7 x 7 domains. The smaller domain size; and the faster shrinking speed of the 9 x 9 structure indicate its lower stability compared to the 5 x 5 structure. The 11 x 11 and 13 x 13 DAS structures were occasionally observed at above 500 degrees C, however, suggesting lower stability than the (2n + 1) x (2n + 1) DAS structures with smaller n. The root 3 x root 3 structures also appear at high-temperatures below 550 degrees C, whereas the 2 x 2, c2 x 4, and c2 x 8 structures are observed only at room temperatures. Clear STM images of the root 3 x root 3 structure can rarely be obtained at temperatures higher than 600 degrees C, which is considered to be due to the thermally excited random motion of Si adatoms
  • T HOSHINO, K KOKUBUN, K KUMAMOTO, T ISHIMARU, OHDOMARI, I
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 34(6B) 3346-3350 1995年6月  
    High temperature scanning tunneling microscopy (STM) observation has been performed to investigate the energetic stability of metastable structures of Si(111) surfaces. Upon supercooling from 1100 degrees C, 5 x 5 and 9 x 9 structures have been observed at 600 degrees C, as well as the reconstructed 7 x 7 and disordered 1 x 1 areas. The 5 x 5 and 9 x 9 areas shrink to disappear as a consequence of the growth of 7 x 7 domains. The smaller domain size; and the faster shrinking speed of the 9 x 9 structure indicate its lower stability compared to the 5 x 5 structure. The 11 x 11 and 13 x 13 DAS structures were occasionally observed at above 500 degrees C, however, suggesting lower stability than the (2n + 1) x (2n + 1) DAS structures with smaller n. The root 3 x root 3 structures also appear at high-temperatures below 550 degrees C, whereas the 2 x 2, c2 x 4, and c2 x 8 structures are observed only at room temperatures. Clear STM images of the root 3 x root 3 structure can rarely be obtained at temperatures higher than 600 degrees C, which is considered to be due to the thermally excited random motion of Si adatoms
  • T HOSHINO, M TSUDA, S OIKAWA, OHDOMARI, I
    PHYSICAL REVIEW B 50(20) 14999-15008 1994年11月  
  • T HOSHINO, M TSUDA, S OIKAWA, OHDOMARI, I
    PHYSICAL REVIEW B 50(20) 14999-15008 1994年11月  
  • T HOSHINO, M TSUDA, S OIKAWA, OHDOMARI, I
    SURFACE SCIENCE 291(3) L763-L767 1993年7月  
    Geometric and electronic structures of dimers on the Si(001)-2 x 1 reconstructed surfaces before and after O2 adsorption have been investigated with an ab initio molecular orbital (MO) calculation at the Hartree-Fock level. The theoretically predicted electron tunneling current in the dimer before and after O2 adsorption has strongly suggested that the O2-adsorbed dimer on clean Si(001) surfaces is observed as dark in the scanning tunneling microscope (STM) images. The dark spot images which have so far been recognized to be a dimer vacancy type defect could be due to the O2 adsorption in parallel to a Si dimer.
  • T HOSHINO, M TSUDA, S OIKAWA, OHDOMARI, I
    SURFACE SCIENCE 291(3) L763-L767 1993年7月  
    Geometric and electronic structures of dimers on the Si(001)-2 x 1 reconstructed surfaces before and after O2 adsorption have been investigated with an ab initio molecular orbital (MO) calculation at the Hartree-Fock level. The theoretically predicted electron tunneling current in the dimer before and after O2 adsorption has strongly suggested that the O2-adsorbed dimer on clean Si(001) surfaces is observed as dark in the scanning tunneling microscope (STM) images. The dark spot images which have so far been recognized to be a dimer vacancy type defect could be due to the O2 adsorption in parallel to a Si dimer.
  • M TSUDA, T HOSHINO, S OIKAWA, OHDOMARI, I
    PHYSICAL REVIEW B 44(20) 11241-11247 1991年11月  
    The buckling mechanism of dimers on reconstructed Si(001) surfaces was investigated by ab initio Hartree-Fock molecular-orbital calculations in the electrically neutral, negatively charged, and positively charged cases. The energy-minimized geometries of dimers depend upon their electrical charge: The most stable geometry is symmetric for the electrically neutral case, but asymmetric or buckled for the negatively and positively charged cases. These results reveal the origin of the buckling in the dimer formation to be an imbalance of the electrical charges on the Si(001) surface. The electronic structure has the remarkable feature that an unpaired electron is localized on one side of the top Si atoms in a buckled dimer. These theoretical results are found to be consistent with those of recent scanning-tunneling-microscopy experiments.
  • M TSUDA, T HOSHINO, S OIKAWA, OHDOMARI, I
    PHYSICAL REVIEW B 44(20) 11241-11247 1991年11月  
    The buckling mechanism of dimers on reconstructed Si(001) surfaces was investigated by ab initio Hartree-Fock molecular-orbital calculations in the electrically neutral, negatively charged, and positively charged cases. The energy-minimized geometries of dimers depend upon their electrical charge: The most stable geometry is symmetric for the electrically neutral case, but asymmetric or buckled for the negatively and positively charged cases. These results reveal the origin of the buckling in the dimer formation to be an imbalance of the electrical charges on the Si(001) surface. The electronic structure has the remarkable feature that an unpaired electron is localized on one side of the top Si atoms in a buckled dimer. These theoretical results are found to be consistent with those of recent scanning-tunneling-microscopy experiments.
  • T. Hoshino, S. Oikawa, M. Tsuda, I. Ohdomari
    Physical Review B 44(20) 11248-11252 1991年  
    The electronic ground state of the symmetric dimer on the Si(001)-(2×1) surface was determined to be the spin-singlet state by means of ab initio quantum-chemical calculations including electron correlations. The eigenstate function of this singlet state reproduced well all the high-resolution scanning-tunneling-microscopy images reported by Hamers et al. of symmetric dimers on the clean Si(001) surface at negative and positive sample bias. The origin of the extremely strong tunneling current at the up atom in the buckled dimers as well as the very weak current at the down atom was elucidated. © 1991 The American Physical Society.
  • T. Hoshino, S. Oikawa, M. Tsuda, I. Ohdomari
    Physical Review B 44(20) 11248-11252 1991年  
    The electronic ground state of the symmetric dimer on the Si(001)-(2×1) surface was determined to be the spin-singlet state by means of ab initio quantum-chemical calculations including electron correlations. The eigenstate function of this singlet state reproduced well all the high-resolution scanning-tunneling-microscopy images reported by Hamers et al. of symmetric dimers on the clean Si(001) surface at negative and positive sample bias. The origin of the extremely strong tunneling current at the up atom in the buckled dimers as well as the very weak current at the down atom was elucidated. © 1991 The American Physical Society.

共同研究・競争的資金等の研究課題

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